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Low‑loss carrier‑stored IGBT with p‑type Schottky diode‑clamped shielding layer
Bo Yi Qing Zhao Qian Zhang JunJi Cheng HaiMeng Huang
YiLan Pan XiaoRan Hu Yong Xiang
Vol. 21, No. 8, pp. 1225-1232, Aug. 2021
10.1007/s43236-021-00265-1
YiLan Pan XiaoRan Hu Yong Xiang
Vol. 21, No. 8, pp. 1225-1232, Aug. 2021
10.1007/s43236-021-00265-1
ISSN : 1598 - 2092
eISSN : 2093 - 4718